GaAs PA,DA & RF Modules

RGPA01

RGPA01 is a high efficiency GaAs EpHEMT MMIC power amplifier designed for 2.4GHz 802.11b/g and WLAN MIMO system. The part is matched at the input and output so no additional RF matching components are required.
Frequency range : 2.4 to 2.5 GHz
Supply Voltage : +3.3V

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RGPA03

RGPA03 is a high efficiency GaAs pHEMT MMIC power amplifier designed for 3.5 GHz WiMax systems. The part is matched at the input and output so no additional RF matching components are required.
Frequency range : 3.4 to 3.6 GHz
Supply Voltage : +3.3V

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RGPA04

RGPA04 is a high efficiency GaAs pHEMT MMIC power amplifier designed for 802.11a WLAN system. The part is matched at the input and output so no additional RF matching components are required.
Frequency range : 4.9 to 5.9 GHz
Supply Voltage : +3.3V

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Driver Amplifiers

RGDA01

RGDA01 is a high efficiency GaAs Ep-HEMT MMIC power amplifier. The device is designed for use in the 802.11a/b/g WLAN systems
Frequency range : 2 to 6 GHz
Supply Voltage/Current : +3.3 V/199 mA
Pout : 20 dBm

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CATV LINE Amplifiers

RTV01

The CATV Line Amplifier designed using GaAs Enhancement mode pHEMT Process. The CATV amplifier provided in a low-cost industry-standard 14 Pin SOIC Package. The above amplifier has 11.5dB Gain. We are using two CATV packages inside the housing.
Frequency range :40 MHz to 870 MHz
Supply Voltage/Current : ±8V/199 mA
p1db Out: : 30 dBm

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Low Noise Amplifiers

RGLNA06

RGLNA06 is a broadband high efficiency GaAs p-HEMT Low noise amplifier designed for WLAN MIMO system.
Frequency range :2 to 6 GHz
Supply Voltage/Current : +3.3V/14mA
Noise Figure:1.5dB @2.4GHz,1.7dB@3.5GHz, 2.2dB@5.5GHz .
Die Size:1 mm X 1 mm .

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RGLNA02

RGLNA02 is a broadband high efficiency GaAs p-HEMT Low noise amplifier designed for WLAN MIMO system.
Frequency range :2 to 6 GHz
Supply Voltage/Current : +3V/18mA
Noise Figure:1.8dB @2GHz
Die Size:.6 mm X .55 mm .

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RGLNA03

RGLNA03 is a broadband high efficiency GaAs p-HEMT Low noise amplifier designed for WLAN MIMO system.
Frequency range :2 to 12 GHz
Supply Voltage/Current : +3V/12mA
Noise Figure:1.5dB @2GHz

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RGLNA08

RGLNA08 is a broadband high efficiency GaAs p-HEMT Low noise amplifier designed for WLAN MIMO system.
Frequency range :2.4 to 2.5 GHz
Supply Voltage/Current : +3.3V/12.4mA
Noise Figure:1.5dB @2.45GHz

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RGLNA10

RGLNA10 is a broadband high efficiency GaAs p-HEMT Low noise amplifier designed for WLAN MIMO system.
Frequency range :7 to 26 GHz
Supply Voltage/Current : +3.3V/86mA
Noise Figure: 3.7 - 4 dB
Gain: 19.7 dB
Pout: +14 dB

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RGLNA01

RGLNA01 is a broadband high efficiency GaAs p-HEMT Low noise amplifier designed for WLAN MIMO system.
Frequency range :0.7 to 3 GHz
Supply Voltage/Current : +3.3V/15 mA
Noise Figure:1.55dB @1GHz

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RGLNA11

RGLNA11 is a broadband high efficiency GaAs p-HEMT Low noise amplifier designed for WLAN MIMO system.
Frequency range :2.0 to 6.0 GHz
Supply Voltage/Current :+3.3 V/37 mA
Noise Figure:1.5 dB @3.5 GHz

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Front End Module

WLAN

RFISFRT01

RFISFRT01 is a monolithic integrated transceiver Front End Module suitable for 802.11b/g (2.4GHz) application. The IC contains all of the required components to implement the RF function of the transmitter and receiver except passive filters. The output of the LNA is made available as an output to permit the insertion of a BPF between the LNA and the Rx out. The output of PA is also made available to insert a BPF in between PA and Transceiver chipset. A single supply voltage and a positive supply switch controls simplify bias requirements.

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WiMax

RFISFR01

A RF front-end module that integrates band switching and is a transceiver front end designed for low voltage operation. The module contains wide band power amplifier, wide band low noise amplifiers, band pass, low pass internal matching. The RFISFR01 is targeted for high volume WiMax application

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