SiGe BiCMOS

CATV Line Amplifier

RJCT01

RJCT01 is a CATV Line amplifier, Designed using 0.18um SiGe BiCMOS technology.
Frequency range : 40.0 to 870.0 MHz
Supply Voltage/Current : ±6.0 V / 73.6 mA

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RJL02

RJL02 is a narrow band low noise amplifier. This LNA is designed on 0.18 SiGe BiCMOS process. This device is design for GPS system application.
Frequency range : 1.5 to 1.7 GHz
Supply Voltage/Current : ±3 V/4.93 mA

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RS01

The RS01 is a high efficiency Single stage Low Noise Amplifier designed on 0.18µm SiGe BiCMOS technology. It is designed for 802.11 b/g standard and WLAN MIMO system.
Frequency range : 1.7 to 2.7 GHz
Supply Voltage/Current : ±1.8 V/11.6 mA

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RS03

 

RS03 is a high efficiency Broadband Single Stage Low noise amplifier, designed on 0.35-µm SiGe BiCMOS technology. It is designed for use in the 802.11 a/b/g and WLAN MIMO system.
Frequency range : 2 to 6 GHz
Supply Voltage/Current : ±3.3 V/11.8 mA

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Power Amplifier 

RJP01

RJP01 is a high efficiency WCDMA power amplifier.It is designed using 0.18um SiGe BiCMOS technology.
Frequency range : 1.920 to 1.980 GHz
Supply Voltage/Current : ±3.2 to 4.2 V / 420 mA

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RJP05

RJP05 is a high efficiency power amplifier.The Amplifier is designed using 0.18um SiGe BiCMOS process for 802.11 b/g WLAN systems.
Frequency range : 2.4 to 2.5 GHz
Supply Voltage/Current : ±3.3 V/250 mA

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Low Noise Amplifiers

RCL02

A high efficiency 2 stage Low Noise Amplifier designed on 0.18µm SiGe BiCMOS process. The device is designed for use in the 802.11b/g and WLAN MIMO system.
Frequency range : 1.7 to 2.7 GHz
Supply Voltage/Current : ±1.8 V/18.8 mA
Noise Figure : as low as 1.3 dB
Die size: 0.75mm by 0.45mm.

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